Mask for extreme ultraviolet lithography process and method of fabricating the same
US10061190B2 · kind B2 · utility
1Cited by
1References
19Claims
0Family size
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Key dates
| Filing date | Aug 13, 2015 |
| Grant date | Aug 28, 2018 |
| Priority date | — |
| Expiry date | Aug 13, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/26
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask for an extreme ultraviolet (EUV) lithography process is provided. The mask includes a substrate, a reflection layer including first material layers and second material layers which are alternately and repeatedly stacked on the substrate, a capping layer on the reflection layer, and a phase shift layer and an absorber layer sequentially stacked on the capping layer. Sidewalls of the phase shift layer and the absorber layer may be oblique to a top surface of the capping layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.