Method and apparatus for correcting errors on a wafer processed by a photolithographic mask
US10061192B2 · kind B2 · utility
4Cited by
3References
23Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Aug 5, 2016 |
| Grant date | Aug 28, 2018 |
| Priority date | — |
| Expiry date | Sep 17, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70633
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.