Patent · US Active

Dummy pattern filling method

US10061884B2 · kind B2 · utility

0Cited by

21References

7Claims

0Family size

Assignee

Shanghai Huahong Grace Semiconductor Manufacturing Corporation · CN

Inventors

Hualun CHEN · Wuxi, CN
Weiran Kong · Shanghai, CN

Key dates

Filing date	Nov 29, 2016
Grant date	Aug 28, 2018
Priority date	—
Expiry date	Dec 9, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D89/10
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A dummy pattern filling method, including: Step I, determining the rule of filling dummy patterns, in accordance with required DR values and isolation rules of patterns; Step II, finding out blank Fields within said layout that need to be filled with dummy patterns; Step III, by following said rule of filling dummy patterns, filling dummy patterns within blank Fields on layouts. Implementing a Smart Dummy Pattern Filling, which enables the Data Ratio (DR) of dummy patterns to come infinitely close the required DR value after completing the filling of dummy patterns.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.