Patent · US Active

Method of producing an opening with smooth vertical sidewall in a semiconductor substrate

US10062610B2 · kind B2 · utility

0Cited by

1References

10Claims

0Family size

Assignee

AMS AG · AT

Inventors

Guenther KOPPITSCH · Lieboch, AT
Bernhard Loeffler · Gleisdorf, AT

Key dates

Filing date	Oct 15, 2015
Grant date	Aug 28, 2018
Priority date	—
Expiry date	Oct 15, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/481
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An opening (17) is etched from a main surface (10) of a substrate (1) of semiconductor material by deep reactive ion etching comprising a plurality of cycles, each of the cycles including a deposition of a passivation in the opening and an application of an etchant. An additional etching is performed between two consecutive cycles by an application of a further etchant that is different from the etchant. The passivation layer (9) is thus etched above a sidewall (7) of the opening to remove undesired protrusions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.