Semiconductor device
US10062747B2 · kind B2 · utility
0Cited by
0References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2016 |
| Grant date | Aug 28, 2018 |
| Priority date | — |
| Expiry date | Jun 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
In a semiconductor device, an AlGaN layer includes a first AlGaN layer and a second AlGaN layer. The second AlGaN layer is positioned between a gate structure portion and a drain electrode and is divided into multiple parts in an arrangement direction in which the gate structure portion and the drain electrode are arranged. A second Al mixed crystal ratio of the second AlGaN layer is less than a first Al mixed crystal ratio of the first AlGaN layer. Accordingly, the semiconductor device is a normally-off-type device and is capable of restricting a decrease of a breakdown voltage and an increase of an on-resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.