Quantum-dot photoactive-layer and method for manufacture thereof

US10062799B2 · kind B2 · utility

Assignee

• KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE · KR

Inventors

• Ansoon Kim · Mountain View, US
• Kyung-joong Kim · Suwon-si, KR
• Songwoung Hong · Daejeon, KR

Key dates

• Filing date: Oct 15, 2015
• Grant date: Aug 28, 2018
• Expiry date: Jan 9, 2036

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

Provided are a method of manufacturing a quantum-dot photoactive-layer including: alternately depositing an amorphous silicon compound layer and a silicon-rich compound layer containing conductive impurities and an excess of silicon based on a stoichiometric ratio on a silicon substrate to form a composite multi-layer; and heat treating the composite multi-layer to form a plurality of silicon quantum-dots in a matrix corresponding to a silicon compound, wherein an amorphous silicon layer containing the conductive impurities is formed at least one time instead of the silicon-rich compound layer, and a quantum-dot photoactive-layer manufactured using the method as described above.