Edge-emitting semiconductor laser
US10063033B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2016 |
| Grant date | Aug 28, 2018 |
| Priority date | — |
| Expiry date | Dec 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/166
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An edge-emitting semiconductor laser includes: a semiconductor substrate; a first cladding layer having a first refractive index and formed on the semiconductor substrate; an active layer formed on the first cladding layer and having a second refractive index higher than the first refractive index; a Bragg reflector formed on the active layer and in which low-refractive-index layers and high-refractive-index layers each having a thickness larger than λ/4n are alternately laid one on another where λ is an lasing wavelength and n is a refractive index of a medium; a light absorption layer formed on the Bragg reflector and having bandgap energy lower than that of the active layer; and a second cladding layer formed on the light absorption layer and having a third refractive index lower than the second refractive index.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.