Scalable integrated MOSFET (SIM)
US10063237B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2017 |
| Grant date | Aug 28, 2018 |
| Priority date | — |
| Expiry date | Jul 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/17792
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high voltage power block includes a high voltage power transistor; and a switch driver configured to drive a gate of the high voltage power transistor. The high voltage power block is integrated in a programmable logic device (PLD) including a programmable fabric, a signal wrapper configured to provide signals between the high voltage power transistor and the programmable fabric, and a plurality of internal components. The plurality of internal components integrated in the PLD are programmably connected and characteristics of the high voltage power transistor are programmably adjusted using the programmable fabric and the signal wrapper.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.