Method for manufacturing a single crystal diamond
US10066317B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 17, 2014 |
| Grant date | Sep 4, 2018 |
| Priority date | — |
| Expiry date | Apr 8, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a single crystal diamond in which vapor phase synthetic single crystal diamond is additionally deposited on a single crystal diamond seed substrate obtained by vapor phase synthesis, includes a step of measuring flatness of the seed substrate, a step of determining whether or not to flatten the seed substrate based on the measurement result of the flatness, and any one of the following two steps of a step of additionally depositing the vapor phase synthetic single crystal diamond after flattening the seed substrate for which the flattening is necessary based on the determination and a step of additionally depositing the vapor phase synthetic single crystal diamond without flattening the seed substrate for which the flattening is not necessary based on the determination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.