Semiconductor device
US10068825B2 · kind B2 · utility
3Cited by
0References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2015 |
| Grant date | Sep 4, 2018 |
| Priority date | — |
| Expiry date | Mar 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a semiconductor element which includes semiconductor substrate, an insulating film formed on a front surface of the semiconductor substrate and having an opening, and an electrode formed in the opening on the front surface of the semiconductor substrate; and a first protective film disposed to cover the semiconductor element. The insulating film has a thickness of not less than 1/500 of a thickness of the semiconductor substrate and not more than 4 μm. The insulating film has a compressive stress per film thickness of not less than 100 MPa/μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.