Compound semiconductor substrate
US10068858B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2016 |
| Grant date | Sep 4, 2018 |
| Priority date | — |
| Expiry date | Feb 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/475
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A compound semiconductor substrate according to the present invention includes a compound semiconductor layer formed on one main surface of a ground substrate via a seed layer, wherein the ground substrate is formed of a sintered body, the seed layer is formed of a single crystal, the compound semiconductor layer includes a structure having a buffer layer and an active layer that are sequentially crystal-grown on the seed layer, a thermal expansion coefficient of the sintered body is 0.7 times or more and 1.4 times or less an average thermal expansion coefficient of the entire compound semiconductor layer, and an FWHM of an X-ray diffraction peak of the buffer layer obtained by an X-ray diffraction rocking curve measurement is 800 arcsec or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.