Power MOSFET with a deep source contact

US10068977B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Furen Lin · Chengdu, CN
• Frank Baiocchi · Allentown, US
• Haian Lin · Bethlehem, US
• Yunlong Liu · Chengdu, CN
• Lark Liu · Chengdu, CN
• Wei Song · Beijing, CN
• Ziqiang ZHAO · Chengdu, CN

Key dates

• Filing date: May 22, 2017
• Grant date: Sep 4, 2018
• Expiry date: May 22, 2037

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T24/39
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A power MOSFET IC device including an array of MOSFET cells formed in a semiconductor substrate. The array of MOSFET cells comprises an interior region of interior MOSFET cells and an outer edge region of peripheral MOSFET cells, each interior MOSFET cell of the interior region of the array comprising a pair of interior MOSFET devices coupled to each other at a common drain contact. In an example embodiment, each interior MOSFET device includes a source contact (SCT) trench extended into a substrate contact region of the semiconductor substrate. The SCT trench is provided with a length less than a linear portion of a polysilicon gate of the interior MOSFET device, wherein the SCT trench is aligned to the polysilicon gate having a curvilinear layout geometry.