Semiconductor device including field effect transistor and a method for fabricating the same
US10068995B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jul 14, 2016 |
| Grant date | Sep 4, 2018 |
| Priority date | — |
| Expiry date | Jul 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of fabricating a field effect transistor, a fin structure made of a first semiconductor material is formed so that the fin structure protrudes from an isolation insulating layer disposed over a substrate. A gate structure is formed over a part of the fin structure, thereby defining a channel region, a source region and a drain region in the fin structure. After the gate structure is formed, laser annealing is performed on the fin structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.