Vertical power component
US10068999B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Apr 29, 2016 |
| Grant date | Sep 4, 2018 |
| Priority date | — |
| Expiry date | Apr 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
Abstract
A high-voltage vertical power component including a silicon substrate of a first conductivity type, and a first semiconductor layer of the second conductivity type extending into the silicon substrate from an upper surface of the silicon substrate, wherein the component periphery includes: a porous silicon ring extending into the silicon substrate from the upper surface to a depth deeper than the first layer; and a doped ring of the second conductivity type, extending from a lower surface of the silicon surface to the porous silicon ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.