Silicon single crystal growing apparatus and silocon single crystal growing method using same
US10072352B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2015 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | Jul 10, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An exemplary embodiment of the present invention provides a silicon single crystal growing apparatus and method. The apparatus comprises: a chamber; a crucible that is disposed in the chamber and receives melted silicon; a heater disposed outside the crucible to heat the crucible; a heat shield part disposed in the chamber; and an auxiliary heat shield part disposed above the crucible to move upward and downward, wherein the auxiliary heat shield part is disposed to be separated from a body part of a single crystal that has grown from the melted silicon, and a rising speed is controlled such that a defect-free zone in the single crystal body part increases. The auxiliary heat shield part can reduce a deviation of a temperature gradient in the body part, whereby increasing the distribution of a defect-free zone in the body part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.