Integrated circuit including an active device for confinement of a light flux defined by trenches having a tiered sidewall
US10073219B2 · kind B2 · utility
1Cited by
10References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 24, 2016 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | Mar 6, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/121
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An integrated circuit includes an active device for confinement of a light flux that is formed in a semiconducting substrate. A confinement rib is separated from two doped zones by two trenches. Each doped zone includes a contacting zone on an upper face. Each trench widens from a bottom wall towards the upper face of the corresponding doped zone. The widening trenches present a sidewall having a tiered profile between the trench and the doped zone. An opposite sidewall presents a straight profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.