Semiconductor device, liquid crystal display device, and semiconductor device manufacturing method
US10073314B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2015 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | Aug 31, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device includes: a first metal layer including a gate electrode; a first insulating layer provided on the first metal layer; an oxide semiconductor layer provided on the first insulating layer; a second insulating layer provided on the oxide semiconductor layer; a second metal layer provided on the oxide semiconductor layer and the second insulating layer, the second metal layer including a source electrode; a third insulating layer provided on the second metal layer; and a first transparent electrode layer provided on the third insulating layer. The oxide semiconductor layer includes a first portion lying above the gate electrode and a second portion extending from the first portion so as to lie across an edge of the gate electrode on the drain electrode side. The third insulating layer does not include an organic insulating layer. The second insulating layer and the third insulating layer have a first contact hole which overlaps the second portion of the oxide semiconductor layer when viewed in a normal direction of the substrate. The first transparent electrode layer includes a transparent electrically-conductive layer which is in contact with the second portion …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.