Systems and methods to maintain optimum stoichiometry for reactively sputtered films
US10074522B1 · kind B1 · utility
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4Claims
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Key dates
| Filing date | Mar 27, 2015 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | Mar 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to systems and methods for preparing reactively sputtered films. The films are generally thin transition metal oxide (TMO) films having an optimum stoichiometry for any useful device (e.g., a sub-stoichiometric thin film for a memristor device). Described herein are systems, methods, and calibrations processes that employ rapid control of partial pressures to obtain the desired film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.