Method of manufacturing semiconductor device
US10074560B2 · kind B2 · utility
2Cited by
9References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 2017 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | May 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6728
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming an insulating pattern layer on a substrate, conformally forming a first conductive layer with a first thickness on the insulating pattern layer, wet etching the first conductive layer to have a second thickness that is less than the first thickness, and forming a second conductive layer on the first conductive layer after wet etching the first conductive layer. The second conductive layer includes a material that is different from a material included in the first conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.