Method of manufacturing semiconductor device
US10074648B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2017 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | Sep 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes: implanting charged particles into a first range and a second range in a semiconductor substrate from at least one of a first surface of the semiconductor substrate and a second surface of the semiconductor substrate located on an opposite side of the first surface so as to increase crystal defect densities in the first range and the second range; implanting n-type impurities into the first range from the first surface so as to make a region amorphous, the region being in the first range and disposed at the first surface; irradiating the first surface with first laser after the implantation of the charged particles and the implantation of the n-type impurities so as to heat the first range and the second range; and crystallizing the region which has been made amorphous in or after the irradiation of the first laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.