Field plate trench FET and a semiconductor component

US10074723B1 · kind B1 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Carolin Tolksdorf · Ebersberg, DE
• Ingo Martini · Ergolding, DE
• Frank Lipski · Reutlingen, DE
• Timm Hoehr · Reutlingen, DE

Key dates

• Filing date: May 13, 2014
• Grant date: Sep 11, 2018
• Expiry date: Aug 16, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/481

Abstract

A field plate trench FET includes a substrate, a gate buried at least partly within the substrate, and a field plate disposed below the gate, both the gate and the field plate being disposed within a trench in the substrate and being surrounded by an insulator. A p-doped domain is disposed within the substrate below the trench. Also described is a semiconductor component having a substrate and a plurality of field plate trench FETs disposed within the substrate.