Semiconductor light emitting device and method of manufacturing the same
US10074773B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2017 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | Aug 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor light emitting device includes a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially laminated, an insulating layer disposed on the light emitting structure and including first and second openings, an electrode layer disposed on the insulating layer and including first and second electrodes, and an adhesive layer disposed between the electrode layer and the insulating layer and including first and second openings. The first opening of the adhesive layer overlaps the first opening of the insulating layer and is equal to or larger than the first opening of the insulating layer. The second opening of the adhesive layer overlaps the second opening of the insulating layer and is equal to or larger than the second opening of the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.