Transistor
US10074818B2 · kind B2 · utility
1Cited by
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4Claims
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Key dates
| Filing date | Jul 9, 2014 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | Jul 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/371
Abstract
The transistor includes a gate electrode, an insulating layer, a semiconductor layer, a source electrode, and a drain electrode on a substrate, in which the gate electrode is formed by using silver β-ketocarboxylate denoted by General Formula (1) described below.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.