High power W-band/F-band Schottky diode based frequency multipliers
US10075151B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2015 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | Dec 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A solid state device chip including diodes (generating a higher frequency output through frequency multiplication of the input frequency) and a novel on-chip power combining design. Together with the on-chip power combining, the chip has increased efficiency because the diodes' anodes, being micro-fabricated simultaneously on the same patch of a GaAs wafer under identical conditions, are very well balanced. The diodes' GaAs heterostructure and the overall chip geometry are designed to be optimized for high power operation. As a result of all these features, the device can generate record-setting power having a signal frequency in the F-band and W-band (30% conversion efficiency).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.