GAAS/SIGE-BICMOS-based transceiver system-in-package for E-band frequency applications
US10075207B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2016 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | May 2, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D30/70
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
An e-band transceiver includes a transmitter circuit and a receiver circuit. The transmitter circuit includes a surface mounted technology (SMT) module on which is mounted a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifier. The receiver circuit of the e-band transceiver includes a receiver-side SMT module on which is mounted a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.