Imaging device and electronic apparatus
US10075659B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2015 |
| Grant date | Sep 11, 2018 |
| Priority date | — |
| Expiry date | Feb 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.