Patent · US Active

Method of forming a photonic crystal material

US10076866B2 · kind B2 · utility

0Cited by

3References

43Claims

0Family size

Assignee

DE LA RUE INTERNATIONAL LIMITED · GB

Inventors

Günther Vulpius · Riedstadt, DE
Götz Peter Hellmann · Darmstadt, DE
Peter Spahn · Darmstadt, DE

Key dates

Filing date	Jul 7, 2010
Grant date	Sep 18, 2018
Priority date	—
Expiry date	Nov 27, 2032

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/24355
WIPO fieldOther special machines
WIPO sectorMechanical engineering

Abstract

A method of forming a film of photonic crystal material. A first process is performed upon a material capable of having a photonic crystal structure, this process causing deformation of the material so as to form a film in which incident light received by the material is selectively reflected or transmitted to generate a first optical effect in the film. A second process is performed upon substantially all of the film which applies a shear stress to the film. This causes a change in the material structure so as to generate a second optical effect in the film, different from the first optical effect, in response to incident light. Security films, devices, articles and documents formed using the method are also discussed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.