Artificial neuron comprising a resistive memory having a stochastic behavior
US10078800B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2014 |
| Grant date | Sep 18, 2018 |
| Priority date | — |
| Expiry date | Sep 17, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A circuit for implementing an artificial neuron comprises: an integrator for an input signal to produce a voltage signal; a signal generator linked to the integrator output producing two output signals when the voltage is at or above a predetermined voltage, a first signal for an output pulse of the neuron and a second signal for a control pulse; a resistive memory comprising two terminals switching from a high to low resistance state in a time following a statistical distribution specific to the memory, a first terminal linked to the output of the integrator; a transistor linked to a branch at zero potential to a second terminal of the resistive memory, controlled by the second output signal such that in the presence of a pulse of voltage the resistive memory switches from its high resistance state to its low resistance state with a view to lowering the voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.