Method for pattern formation on a substrate, associated semiconductor devices, and uses of the method
US10079145B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 13, 2016 |
| Grant date | Sep 18, 2018 |
| Priority date | — |
| Expiry date | Oct 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a method for pattern formation on a substrate. An example embodiment includes a method for pattern formation. The method includes providing a photoresist layer on a composite substrate. The method also includes patterning the photoresist layer by lithography to define a plurality of parallel stripe photoresist structures. The method further includes providing a block copolymer on and along the composite substrate, in between the parallel stripe photoresist structures. The block copolymer includes a first component and a second component. The method additionally includes subjecting the block copolymer to predetermined conditions to cause phase separation of the first component and the second component. In addition, the method includes performing a sequential infiltration synthesis process. Still further, the method includes selectively removing the parallel stripe photoresist structures. Additionally, the method includes defining a core stripe structure. Even further, the method includes performing a self-aligned multiple patterning process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.