Integrated circuit device and method of fabricating the same
US10079210B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2016 |
| Grant date | Sep 18, 2018 |
| Priority date | — |
| Expiry date | Jun 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76876
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device including a substrate having at least one fin-shaped active region, the at least one fin-shaped active region extending in a first direction, a gate line extending on the at least one fin-shaped active region in a second direction, the second direction intersecting with the first direction, a conductive region on a portion of the at least one fin-shaped active region at one side of the gate line, and a contact plug extending from the conductive region in a third direction, the third direction being perpendicular to a main plane of the substrate, may be provided. The contact plug may include a metal plug, a conductive barrier film on the conductive region, the conductive barrier film surrounding a sidewall and a bottom surface of the metal plug, the conductive barrier film including an N-rich metal nitride film, and a metal silicide film between the conductive region and the conductive barrier film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.