Semiconductor device and method for fabricating same
US10079245B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2016 |
| Grant date | Sep 18, 2018 |
| Priority date | — |
| Expiry date | Sep 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a lower structure including a lower conductor, an upper structure having an opening exposing the lower conductor on the lower structure, and a connection structure filling the opening and connected to the lower conductor. The connection structure includes a first tungsten layer covering an inner surface of the opening and defining a recess region in the opening, and a second tungsten layer filling the recess region on the first tungsten layer. A grain size of the second tungsten layer in an upper portion of the connection structure is greater than a grain size of the second tungsten layer in a lower portion of the connection structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.