Manufacture of a CdHgTe multispectral photodiode array by cadmium diffusion

US10079263B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

• Florent Rochette · Seyssinet-Pariset, FR

Key dates

• Filing date: Oct 10, 2016
• Grant date: Sep 18, 2018
• Expiry date: Oct 10, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F71/1253

Abstract

A method for manufacturing a multi-spectral photodiode array in a CdxHg1-xTe semiconductor layer constituted of pixels, the method including a step of producing a PN junction in each pixel and further includes producing a cadmium-rich structure on the semiconductor layer, structured so that all the pixels are not surmounted by a same quantity of cadmium atoms, this quantity being able to be zero; and inter-diffusion annealing, realizing the diffusion of cadmium atoms from the cadmium-rich structure to the semiconductor layer. Pixels that do not all have the same cutoff wavelength are thereby obtained.