Graphene electronic device having channel layer including graphene islands and method of fabricating the same
US10079313B2 · kind B2 · utility
3Cited by
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Key dates
| Filing date | Aug 15, 2016 |
| Grant date | Sep 18, 2018 |
| Priority date | — |
| Expiry date | Aug 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A graphene electronic device includes a gate insulating layer on a conductive substrate, a channel layer on the gate insulating layer, and a source electrode on one end of the channel layer and a drain electrode on another end of the channel layer. The channel layer includes a semiconductor layer and a graphene layer in direct contact with the semiconductor layer, and the graphene layer includes a plurality of graphene islands spaced apart from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.