Thin film bulk acoustic resonator and method for manufacturing same
US10079589B2 · kind B2 · utility
3Cited by
1References
22Claims
0Family size
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Key dates
| Filing date | Jun 7, 2012 |
| Grant date | Sep 18, 2018 |
| Priority date | — |
| Expiry date | Mar 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/021
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A thin film bulk acoustic resonator and a method of manufacturing the same is disclosed. The thin film bulk acoustic resonator includes an acoustic resonator including a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode; an air gap disposed below the acoustic resonator and above a substrate to reflect the acoustic wave; and an anchor disposed on each of both surfaces of the air gap and having the same thickness as the air gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.