Floating memristor
US10083974B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2017 |
| Grant date | Sep 25, 2018 |
| Priority date | — |
| Expiry date | Aug 10, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A floating memristor with a nano-battery between a top and bottom floating gates is disclosed. The floating memristor includes a nano-battery, a top floating gate assembly disposed on an anode of the nano-battery, and a bottom floating gate assembly disposed on a cathode of the nano-battery. The floating memristor is an artificial synapse. The top floating gate assembly and the anode of the nano-battery convert electric signal to ionic signal by tunneling effect and field effect to simulate a presynaptic membrane. The electrolyte of the nano-battery is an ionic channel as a synaptic gap. The anode and the bottom floating gate transfer the ionic signal to electric signal by field effect and tunneling effect to simulate a postsynaptic membrane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.