Complementary thin film transistor and manufacturing method thereof, array substrate, display apparatus
US10083988B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2014 |
| Grant date | Sep 25, 2018 |
| Priority date | — |
| Expiry date | Aug 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
The present invention provides a complementary thin film transistor and a manufacturing method thereof, an array substrate and a display apparatus, relates to the field of manufacturing technology of thin film transistor, and can solve the problem that active layer materials of first and second thin film transistors in a complementary thin film transistor of the prior art have influence with each other. The manufacturing method of the present invention comprises steps of: forming a pattern comprising an active layer of a first thin film transistor and a protective layer on a base by a patterning process, and the protective layer is at least located above the active layer of the thin film transistor; and forming a pattern of an active layer of a second thin film transistor on the base subjected to above step by a patterning process. The present invention may be applied to various circuits and systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.