Patent · US Active

Light-emitting diode structure including separation unit between light-emitting diode units and display apparatus including the same

US10084009B2 · kind B2 · utility

9Cited by
0References
18Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMay 10, 2016
Grant dateSep 25, 2018
Priority date
Expiry dateMay 19, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H29/142
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A light-emitting diode structure includes light-emitting diode units, and a separation unit, where one of the light-emitting diode units includes a stacked structure including an n-type semiconductor layer, a p-type semiconductor layer, and a photo-active layer arranged between the n-type semiconductor layer and the p-type semiconductor layer, a first electrode, which faces a surface of the stacked structure and is electrically connected to one of the n-type semiconductor layer and the p-type semiconductor layer, and a second electrode, which faces the surface of the stacked structure opposite to the surface faced by the first electrode and is electrically connected to one of the n-type semiconductor layer and the p-type semiconductor layer, and the separation unit is arranged between at least two adjacent light-emitting diode units among the light-emitting diode units and separates the two light-emitting diode units from each other.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.