Lateral insulated-gate bipolar transistor and manufacturing method therefor
US10084073B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 28, 2015 |
| Grant date | Sep 25, 2018 |
| Priority date | — |
| Expiry date | Sep 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/514
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a lateral insulated-gate bipolar transistor (LIGBT), comprising a substrate (10), an anode terminal and a cathode terminal on the substrate (10), and a drift region (30) and a gate (61) located between the anode terminal and the cathode terminal. The anode terminal comprises a P-type buried layer (52) on the substrate (10), an N-type buffer region (54) on the P-type buried layer (52), and a P+ collector region (56) on the surface of the N-type buffer region (54). The LIGBT further comprises a trench gate adjacent to the anode terminal, wherein the trench gate penetrates from the surfaces of the N-type buffer region (54) and the P+ collector region (56) to the P-type buried layer (52), and the trench gate comprises an oxidation layer (51) on the inner surface of a trench and polysilicon (53) filled into the oxidation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.