Methods of making multichannel devices with improved performance

US10084075B2 · kind B2 · utility

Assignee

• NORTHROP GRUMMAN SYSTEMS CORPORATION · US

Inventors

• Bettina Nechay · Laurel, US
• Shalini Gupta · Baltimore, US
• Matthew Russell King · Wake Forest, US
• Eric J. Stewart · Silver Spring, US
• Robert S. Howell · Silver Spring, US
• Justin Andrew Parke · Ellicott City, US
• Harlan Carl Cramer · Columbia, US
• Howell George Henry · Ellicott City, US
• Ronald G. Freitag · Ellicott City, US
• Karen Marie Renaldo · Pasadena, US

Key dates

• Filing date: Jun 15, 2017
• Grant date: Sep 25, 2018
• Expiry date: Jun 15, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/117
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A transistor device is provided that comprises a base structure, and a superlattice structure overlying the base structure and comprising a multichannel ridge having sloping sidewalls. The multichannel ridge comprises a plurality of heterostructures that each form a channel of the multichannel ridge, wherein a parameter of at least one of the heterostructures is varied relative to other heterostructures of the plurality of heterostructures. The transistor device further comprises a three-sided gate contact that wraps around and substantially surrounds the top and sides of the multichannel ridge along at least a portion of its depth.