Thin film transistor, method for manufacturing the same, and array substrate
US10084095B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2016 |
| Grant date | Sep 25, 2018 |
| Priority date | — |
| Expiry date | Mar 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8303
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The embodiments of present disclosure provide a thin film transistor, a method for manufacturing the same, and an array substrate. The thin film transistor comprises an active layer provided on a substrate, the active layer including a middle channel region, a first high resistance region and a second high resistance region provided respectively on external sides of the middle channel region, a source region provided on an external side of the first high resistance region and a drain region provided on an external side of the second high resistance region, wherein a base material of the active layer is diamond single crystal. According to the thin film transistor, the method for manufacturing the same, and the array substrate provided in the embodiments of present disclosure, by providing high resistance regions on external sides of the middle channel region of the active layer, the carrier mobility is reduced and the leakage current of the thin film transistor made of single crystalline diamond is effectively suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.