Optoelectronic device and the manufacturing method thereof
US10084115B2 · kind B2 · utility
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12References
20Claims
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Key dates
| Filing date | Mar 23, 2017 |
| Grant date | Sep 25, 2018 |
| Priority date | — |
| Expiry date | Mar 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/034
Abstract
The present disclosure provides an optoelectronic device comprising a semiconductor stack comprising a first side having a first length; a first contact layer on the semiconductor stack; and a second contact layer on the semiconductor stack opposite to the first contact layer, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; and wherein the second contact layer comprises multiple contact regions separated from each other and arranged in a two-dimensional array, wherein a first distance between the two adjacent contact regions is between 0.8% and 8% of the first length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.