Thin-film capacitor and electronic component embedded substrate
US10085343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2017 |
| Grant date | Sep 25, 2018 |
| Priority date | — |
| Expiry date | Nov 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10015
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin-film capacitor includes a pair of electrode layers composed of a first electrode layer configured to store positive charges and a second electrode layer configured to store negative charges; and a dielectric layer sandwiched between the pair of electrode layers along a lamination direction. The first electrode layer includes a first main electrode layer in contact with the dielectric layer. The second electrode layer includes a second main electrode layer and a second sub-electrode layer, both of which are formed of different metallic materials. The second sub-electrode layer is sandwiched between the dielectric layer and the second main electrode layer along the lamination direction. The second main electrode layer is formed of a material having a melting point lower than both a melting point of a material of the first electrode layer, or the first main electrode layer, and that of a material of the second sub-electrode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.