Silicon-nitride-containing thermal chemical vapor deposition coating
US10087521B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2015 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Aug 4, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Surfaces, articles, and processes having silicon-nitride-containing thermal chemical vapor deposition coating are disclosed. A process includes producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. Flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface. A surface includes a silicon-nitride-containing thermal chemical vapor deposition coating. The surface has at least a concealed portion that is obstructed from view. An article includes a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. The surface has at least a concealed portion that is obstructed from view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.