Magnetoresistive sensor fabrication
US10090008B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2017 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Jun 23, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/398
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Implementations described and claimed herein include a reader structure, comprising a first reader, including a sensor stack and a top shield structure, the top shield structure comprises a synthetic antiferromagnetic shield (SAF) structure, including a reference layer including at least a layer of NiFe and an impurity additive, an RKKY coupling layer RKKY coupling layer (e.g., Ru layer), and a pinned layer. In another implementation, the RL of the SAF shield structure of a first reader includes at least a layer of amorphous magnetic material. Yet, in another implementation, the SAF shield structure includes an insertion layer of amorphous magnetic material under the SAF shield RL, within the SAF shield RL or between the SAF shield RL and SAF shield Ru.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.