Semiconductor device and method for operating the semiconductor device
US10090022B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2017 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Jun 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
To provide a semiconductor device with a high output voltage. A gate of a first transistor is electrically connected to a first terminal through a first capacitor. A gate of a second transistor is electrically connected to a second terminal through a second capacitor. One of a source and a drain of a third transistor is electrically connected to the gate of the first transistor through a third capacitor. One of a source and a drain of a fourth transistor is electrically connected to the gate of the second transistor through a fourth capacitor. The other of the source and the drain of the third transistor and the other of the source and the drain of the fourth transistor are electrically connected to a high potential power source. A third terminal is electrically connected to one of a source and a drain of the second transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.