Oxide sintered body and sputtering target, and method for producing same
US10090136B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Sep 10, 2013 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Jun 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An oxide sintered body which is obtained by mixing and sintering zinc oxide, indium oxide, gallium oxide and tin oxide. The relative density of the oxide sintered body is 85% or more and the average grain size of crystal grains observed on the surface of the oxide sintered body is less than 10 μm. X-ray diffraction of the oxide sintered body shows that a Zn2SnO4 phase and an InGaZnO4 phase are the main phases and that an InGaZn2O5 phase is contained in an amount of 3 volume % or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.