Patent · US Active

Method for producing a conductor line

US10090192B2 · kind B2 · utility

0Cited by

3References

20Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Matthias Stecher · Munich, DE
Markus Menath · Regensburg, DE
Andreas Zankl · Wiesent, DE
Anja Reitmeier · Regensburg, DE

Key dates

Filing date	Nov 9, 2015
Grant date	Oct 2, 2018
Priority date	—
Expiry date	Dec 31, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a rounded conductor line of a semiconductor component is disclosed. In that method, a partially completed semiconductor component is provided. The partially completed semiconductor component has a bottom side and a top side spaced distant from the bottom side in a vertical direction. Also provided is an etchant. On the top side, a dielectric layer is arranged. The dielectric layer has at least two different regions that show different etch rates when they are etched with the etchant. Subsequently, a trench is formed in the dielectric layer such that the trench intersects each of the different regions. Then, the trench is widened by etching the trench with the etchant at different etch rates. By filling the widened trench with an electrically conductive material, a conductor line is formed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.