Bump structure and method for forming the same
US10090267B2 · kind B2 · utility
4Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2014 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | May 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure is provided. The semiconductor structure includes a first substrate and a metal pad formed over the first substrate. The semiconductor structure further includes a modified conductive pillar having a top portion and a bottom portion formed over the metal pad and a solder layer formed over the modified conductive pillar. In addition, the top portion of the modified conductive pillar has a first sidewall in a first direction and a bottom portion of the modified conductive pillar has a second sidewall in a second direction different from the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.