Thin film transistor with a reaction layer creating oxygen vacancies in an oxide semiconductor
US10090337B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2016 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Jul 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor includes a gate electrode on a substrate, a gate insulation layer which covers the gate electrode on the substrate, an oxide semiconductor pattern which is disposed on the gate insulation layer and includes a channel portion superimposed over the gate electrode, and low resistance patterns provided at edges of the channel portion, respectively, and including oxygen vacancies, a channel passivation layer on the oxide semiconductor pattern, a reaction layer which covers the oxide semiconductor pattern and the channel passivation layer, and includes a metal oxide, and a source electrode and a drain electrode which contact the oxide semiconductor pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.