TFT substrate manufacture method
US10090414B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2017 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Feb 20, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/123
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a TFT (Thin Film Transistor) substrate manufacture method, which includes forming a TFT gate electrode on a substrate, sequentially forming a first insulation layer, an active layer, a source electrode, and a drain electrode, and then forming a second insulation layer and coating a photoresist thereon, defining a pixel electrode pattern, forming a drain VIA hole on the second insulation layer, depositing a pixel electrode layer after preparing suede on the photoresist, and permeating the suede with a stripping liquid to remove the photoresist and the pixel electrode layer on the photoresist so as to form a pixel electrode connecting to the drain electrode via the drain VIA hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.